Electronic and optical properties of lead iodide

Abstract

ABSTRACT: Lead iodide (PbI2) is a very important material with a technological applicability as a room-temperature radiation detector. It is a wide-band-gap semiconductor (Eg.2 eV) with high environmental stability efficiency. The performance of the detector cannot be fully understood unless its electronic and optical properties are determined. Recently, its band-gap energy and thermal properties were determined by photoacoustic spectroscopy. A single crystal of PbI2 was grown by the Bridgman method with the c-axis oriented perpendicular to the growth axis. The purpose of this work is to obtain the electronic structure of PbI2, its dielectric functions e 1 and e 2 by ellipsometry and theoretically by full-potential linear muffin-tinorbital ~FPLMTO! method, and the temperature dependence of the measured band-gap energy by optica absorption. The obtained Eg(T) can be fitted by two different methods, leading to Eg ~0 K! and Eg ~300 K!.