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https://hdl.handle.net/10495/31001
Título : | Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure |
Autor : | López Ríos, Sonia Yaneth Mora Ramos, Miguel Eduardo Duque Echeverri, Carlos Alberto |
metadata.dc.subject.*: | Pozos cuánticos Quantum wells Presión hidrostática Hydrostatic pressure Banda de conducción Conduction band III-V semiconductors Fotoluminiscencia |
Fecha de publicación : | 2008 |
Editorial : | Springer |
Resumen : | ABSTRACT: The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ − X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ − X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1−xAlxAs quantum wells. |
metadata.dc.identifier.eissn: | 1434-6036 |
ISSN : | 1434-6028 |
metadata.dc.identifier.doi: | 10.1140/epjb/e2008-00161-6 |
metadata.dc.identifier.url: | https://www.springer.com/journal/10051 |
Aparece en las colecciones: | Artículos de Revista en Ciencias Exactas y Naturales |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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DuqueCarlos_2008_MixingInGaAs-Ga1-xAlxAs.pdf | Artículo de investigación | 290.01 kB | Adobe PDF | Visualizar/Abrir |
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