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dc.contributor.authorDuque Echeverri, Carlos Alberto-
dc.contributor.authorMora Ramos, Miguel Eduardo-
dc.contributor.authorKasapoglu, E.-
dc.contributor.authorSokmen, I.-
dc.contributor.authorSari, H.-
dc.date.accessioned2020-01-14T22:07:34Z-
dc.date.available2020-01-14T22:07:34Z-
dc.date.issued2012-
dc.identifier.citationC.A. Duque-Echeverri, M.E. Mora-Ramos, E. Kasapoglu, I. Sokmen, and H. Sari, “Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well,” Phys. Status Solidi B., vol. 249, no. 1, pp. 118-127, 2012. http://dx.doi.org/10.1002/pssb.201147250spa
dc.identifier.issn0370-1972-
dc.identifier.urihttp://hdl.handle.net/10495/13203-
dc.description.abstractABSTRACT: The effects of intense laser radiation on the exciton states in GaAs-Ga1–xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The results for the exciton binding energy, the energy of the exciton-related photoluminescence peak, and the carriers overlap integral are presented for several configurations of the quantum well size, the strength of the applied electric fields, and the incident laser radiation.spa
dc.format.extent9spa
dc.format.mimetypeapplication/pdfspa
dc.language.isoengspa
dc.publisherWiley Vchspa
dc.type.hasversioninfo:eu-repo/semantics/publishedVersionspa
dc.rightsAtribución-NoComercial-SinDerivadas 2.5 Colombia*
dc.rightsinfo:eu-repo/semantics/openAccessspa
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/co/*
dc.subjectElectric fields-
dc.subjectExcitons-
dc.subjectIntense laser fields-
dc.subjectQuantum wells-
dc.titleCombined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum wellspa
dc.typeinfo:eu-repo/semantics/articlespa
dc.identifier.doi10.1002/pssb.201147250-
oaire.versionhttp://purl.org/coar/version/c_970fb48d4fbd8a86spa
dc.rights.accessrightshttp://purl.org/coar/access_right/c_abf2spa
dc.identifier.eissn1521-3951-
oaire.citationtitlePhysica Status Solidi B.spa
oaire.citationstartpage118spa
oaire.citationendpage127spa
oaire.citationvolume249spa
oaire.citationissue1spa
dc.rights.creativecommonshttps://creativecommons.org/licenses/by-nc-nd/4.0/spa
dc.publisher.placeReino Unidospa
dc.type.coarhttp://purl.org/coar/resource_type/c_2df8fbb1spa
dc.type.redcolhttps://purl.org/redcol/resource_type/ARTspa
dc.type.localArtículo de investigaciónspa
dc.relation.ispartofjournalabbrevPhys. stat. sol.spa
Aparece en las colecciones: CIA (Centro de Investigaciones Ambientales y de Ingeniería)

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