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Título : Emergence of competing magnetic interactions induced by Ge doping in the semiconductor FeGa3
Autor : Álvarez Quiceno, Juan Camilo
Cabrera Baez, Michael
Ribeiro, R. A.
Ávila, Marco A.
Dalpian, Gustavo Martini
metadata.dc.subject.*: Aleaciones
Estructura electrónica
Interacciones magnéticas
Semiconductores
Fecha de publicación : 2016
Editorial : The American Physical Society
Citación : Álvarez Quiceno, J. C., Cabrera Baez, M., Ribeiro, R. A., Ávila, M. A., & Dalpian, G. M. (2016). Emergence of competing magnetic interactions induced by Ge doping in the semiconductor FeGa3. Physical Review B: Condensed Matter. 84(014432),1-6. DOI:10.1103/PhysRevB.94.014432
Resumen : ABSTRACT: FeGa3 is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground states that are not well understood. In thiswork,we have performed a joint theoretical and experimental study of FeGa3−xGex using density functional theory and magnetic susceptibility measurements. For low Ge concentrations we observe the formation of localized moments on some Fe atoms and, as the dopant concentration increases, a more delocalized magnetic behavior emerges. The magnetic configuration strongly depends on the dopant distribution, leading even to the appearance of antiferromagnetic interactions in certain configurations.
ISSN : 163-1829
metadata.dc.identifier.doi: 10.1103/PhysRevB.94.014432
Aparece en las colecciones: CIEN (Centro de Investigaciones en Ciencias Exactas y Naturales)

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