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Título : Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
Autor : López Ríos, Sonia Yaneth
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
metadata.dc.subject.*: Pozos cuánticos
Quantum wells
III-V semiconductors
Fecha de publicación : 2008
Editorial : Springer
Resumen : ABSTRACT: The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ − X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ − X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1−xAlxAs quantum wells.
metadata.dc.identifier.eissn: 1434-6036
ISSN : 1434-6028
metadata.dc.identifier.doi: 10.1140/epjb/e2008-00161-6
metadata.dc.identifier.url: https://www.springer.com/journal/10051
Aparece en las colecciones: Artículos de Revista en Ciencias Exactas y Naturales

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