Por favor, use este identificador para citar o enlazar este ítem:
https://hdl.handle.net/10495/8289
Registro completo de metadatos
Campo DC | Valor | Lengua/Idioma |
---|---|---|
dc.contributor.author | Kuriplach, Jan | - |
dc.contributor.author | Morales Aramburo, Álvaro Luis | - |
dc.contributor.author | Dauwe, Charles | - |
dc.contributor.author | Segers, Danny | - |
dc.contributor.author | Sob, M. | - |
dc.date.accessioned | 2017-09-21T19:35:48Z | - |
dc.date.available | 2017-09-21T19:35:48Z | - |
dc.date.issued | 1998 | - |
dc.identifier.citation | Kuriplach, J., Morales Aramburo, A. L., Dauwe, C., Segers, D., & Sob, M. (1998). Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons. Physical Review B. 58(16), 10475-10483. | spa |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10495/8289 | - |
dc.description.abstract | ABSTRACT: Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes (VOn), and divacancy-oxygen complex are investigated. In addition to the positron lifetime and positron binding energy to defects, we also calculate the momentum distribution of annihilation photons (MDAP) for high momenta, which has been recently shown to be a useful quantity for defect identification in semiconductors. The influence of atomic relaxations around defects on positron properties is also examined. Mutual differences among the high momentum parts of the MDAP for various defects studied are mostly considerable, which can be used for the experimental defect determination. | spa |
dc.format.mimetype | application/pdf | spa |
dc.language.iso | eng | spa |
dc.publisher | The American Physical Society | spa |
dc.type.hasversion | info:eu-repo/semantics/submittedVersion | spa |
dc.rights | Atribución-NoComercial-SinDerivadas 2.5 Colombia | * |
dc.rights | info:eu-repo/semantics/openAccess | spa |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.5/co/ | * |
dc.title | Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons | spa |
dc.type | info:eu-repo/semantics/article | spa |
dc.publisher.group | Grupo Estado Sólido | spa |
oaire.version | http://purl.org/coar/version/c_970fb48d4fbd8a85 | spa |
dc.rights.accessrights | http://purl.org/coar/access_right/c_abf2 | spa |
dc.identifier.eissn | 1550-235X | - |
oaire.citationtitle | Physical review. B, Condensed matter and materials physics. | spa |
oaire.citationstartpage | 10475 | spa |
oaire.citationendpage | 10483 | spa |
oaire.citationvolume | 58 | spa |
oaire.citationissue | 16 | spa |
dc.rights.creativecommons | https://creativecommons.org/licenses/by-nc-nd/4.0/ | spa |
dc.publisher.place | Estados Unidos | spa |
dc.type.coar | http://purl.org/coar/resource_type/c_2df8fbb1 | spa |
dc.type.redcol | https://purl.org/redcol/resource_type/ART | spa |
dc.type.local | Artículo de investigación | spa |
dc.subject.decs | Silicio | - |
dc.subject.decs | Silicon | - |
dc.subject.lemb | Electrones | - |
dc.subject.lemb | Electrons | - |
dc.subject.lemb | Emisión de positrones | - |
dc.subject.lemb | Positrons - emission | - |
dc.subject.agrovoc | Espectroscopia | - |
dc.subject.agrovoc | Spectroscopy | - |
dc.subject.agrovocuri | http://aims.fao.org/aos/agrovoc/c_14498 | - |
dc.description.researchgroupid | COL0008138 | spa |
Aparece en las colecciones: | Artículos de Revista en Ciencias Exactas y Naturales |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
MoralesAlvaro_1998_VacanciesComplexesSilicon.pdf | Artículo de investigación | 149.98 kB | Adobe PDF | Visualizar/Abrir |
Este ítem está sujeto a una licencia Creative Commons Licencia Creative Commons