Por favor, use este identificador para citar o enlazar este ítem: https://hdl.handle.net/10495/41044
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dc.contributor.advisorMorales Aramburo, Álvaro Luis-
dc.contributor.advisorDuque Echeverri, Carlos Alberto-
dc.contributor.authorGil Corrales, John Alexander-
dc.date.accessioned2024-08-09T20:16:24Z-
dc.date.available2024-08-09T20:16:24Z-
dc.date.issued2023-
dc.identifier.urihttps://hdl.handle.net/10495/41044-
dc.description.abstractABSTRACT: In this work, physics characterization and analysis of a GaAs quantum well with AlGaAs barriers is carried out, considering an interior doped layer. An analysis of the probability density, the energy spectrum, and the electronic density has been carried out, solving in a self-consistent way the Schrödinger, Poisson, and charge neutrality equations. Between the characterization, the system response under geometric changes in the well width and non-geometric changes such as the position and doped layer width and the donor’s density were reviewed. All the second-order differential equations have been solved using the finitedifference method. Finally, with the obtained wave functions and energies, the optical absorption coefficient and the electromagnetically induced transparency between the first three confined states have been calculated. The results show the possibility of tuning the optical absorption coefficient and the electromagnetically induced transparency via changes in the system geometry and doped layer characteristics.spa
dc.format.extent90 páginasspa
dc.format.mimetypeapplication/pdfspa
dc.language.isoengspa
dc.type.hasversioninfo:eu-repo/semantics/draftspa
dc.rightsinfo:eu-repo/semantics/openAccessspa
dc.rightsAtribución-NoComercial-SinDerivadas 2.5 Colombia (CC BY-NC-ND 2.5 CO)*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/co/*
dc.subject.lcshPozos cuánticos-
dc.subject.lcshQuantum wells-
dc.subject.lcshTeoría del campo autoconsistente-
dc.subject.lcshSelf-consistent field theory-
dc.subject.lcshArseniuro de galio-
dc.subject.lcshGallium arsenide-
dc.subject.lcshEcuación de Poisson-
dc.subject.lcshPoisson's equation-
dc.subject.lcshEcuación de Schrödinger-
dc.subject.lcshSchrödinger equation-
dc.subject.lcshSemiconductores - Propiedades ópticas-
dc.subject.lcshSemiconductors - Optical properties-
dc.subject.lcshDopaje de semiconductores-
dc.subject.lcshSemiconductor doping-
dc.titleSelf-consistent calculation and analysis of the optical properties and modulated doping in GaAs/AlGaAs quantum wellsspa
dc.typeinfo:eu-repo/semantics/masterThesisspa
dc.publisher.groupGrupo de Materia Condensada-UdeAspa
oaire.versionhttp://purl.org/coar/version/c_b1a7d7d4d402bccespa
dc.rights.accessrightshttp://purl.org/coar/access_right/c_abf2spa
thesis.degree.nameMagíster en Físicaspa
thesis.degree.levelMaestríaspa
thesis.degree.disciplineFacultad de Ciencias Exactas y Naturales. Maestría en Físicaspa
thesis.degree.grantorUniversidad de Antioquiaspa
dc.rights.creativecommonshttps://creativecommons.org/licenses/by-nc-nd/4.0/spa
dc.publisher.placeMedellín, Colombiaspa
dc.type.coarhttp://purl.org/coar/resource_type/c_bdccspa
dc.type.redcolhttps://purl.org/redcol/resource_type/TMspa
dc.type.localTesis/Trabajo de grado - Monografía - Maestríaspa
dc.subject.proposalAluminum gallium arsenidespa
dc.subject.proposalElectromagnetically induced transparencyspa
dc.subject.lcshurihttp://id.loc.gov/authorities/subjects/sh88000478-
dc.subject.lcshurihttp://id.loc.gov/authorities/subjects/sh85119717-
dc.subject.lcshurihttp://id.loc.gov/authorities/subjects/sh95005279-
dc.subject.lcshurihttp://id.loc.gov/authorities/subjects/sh85103960-
dc.subject.lcshurihttp://id.loc.gov/authorities/subjects/sh85118495-
dc.subject.lcshurihttp://id.loc.gov/authorities/subjects/sh85119914-
dc.subject.lcshurihttp://id.loc.gov/authorities/subjects/sh85119890-
Aparece en las colecciones: Maestrías de la Facultad de Ciencias Exactas y Naturales

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